发明授权
- 专利标题： Semiconductor laser and method for producing the same
- 专利标题（中）： 半导体激光器及其制造方法
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申请号： US331939申请日： 1994-10-31
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公开(公告)号： US5568501A公开(公告)日： 1996-10-22
- 发明人: Nobuyuki Otsuka , Masahiro Kitoh , Masato Ishino , Yasushi Matsui
- 申请人： Nobuyuki Otsuka , Masahiro Kitoh , Masato Ishino , Yasushi Matsui
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX5-273441 19931101; JPX6-116616 19940530
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01S5/22 ; H01S5/227 ; H01S5/343 ; H01S3/19
摘要：
The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.
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