发明授权
US5572472A Integrated zener-zap nonvolatile memory cell with programming and pretest capability 失效
集成的齐纳瓦非易失性存储器单元,具有编程和预测试功能

Integrated zener-zap nonvolatile memory cell with programming and
pretest capability
摘要:
A "zener-zap" memory cell with pretest capability for testing effects that would be realized from permanently programming the memory cell is provided. The memory cell is addressable and provides a binary signal at an output. The memory cell uses a zener diode as a memory element which is permanently programmed when selectively coupled to a programming voltage which exceeds the reverse breakdown voltage of the zener diode. The memory cell has a test circuit for generating the programmed binary signal at the output of the memory cell prior to permanently programming the zener diode and when coupled to a pretest voltage.
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