发明授权
US5572472A Integrated zener-zap nonvolatile memory cell with programming and
pretest capability
失效
集成的齐纳瓦非易失性存储器单元,具有编程和预测试功能
- 专利标题: Integrated zener-zap nonvolatile memory cell with programming and pretest capability
- 专利标题(中): 集成的齐纳瓦非易失性存储器单元,具有编程和预测试功能
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申请号: US421774申请日: 1995-04-14
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公开(公告)号: US5572472A公开(公告)日: 1996-11-05
- 发明人: Mark B. Kearney , Dennis M. Koglin , Douglas B. Osborn , William P. Whitlock
- 申请人: Mark B. Kearney , Dennis M. Koglin , Douglas B. Osborn , William P. Whitlock
- 申请人地址: IN Kokomo
- 专利权人: Delco Electronics Corporation
- 当前专利权人: Delco Electronics Corporation
- 当前专利权人地址: IN Kokomo
- 主分类号: G11C17/18
- IPC分类号: G11C17/18 ; G11C29/04 ; G11C29/00
摘要:
A "zener-zap" memory cell with pretest capability for testing effects that would be realized from permanently programming the memory cell is provided. The memory cell is addressable and provides a binary signal at an output. The memory cell uses a zener diode as a memory element which is permanently programmed when selectively coupled to a programming voltage which exceeds the reverse breakdown voltage of the zener diode. The memory cell has a test circuit for generating the programmed binary signal at the output of the memory cell prior to permanently programming the zener diode and when coupled to a pretest voltage.
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