发明授权
- 专利标题： Bump formation on yielded semiconductor dies
- 专利标题（中）： 在产生的半导体管芯上形成凹凸
-
申请号： US353022申请日： 1994-12-09
-
公开(公告)号： US5587336A公开(公告)日： 1996-12-24
- 发明人: Tsing-Chow Wang , Serena M. Luo , Marlita F. Macaraeg , Francisca Tung , Thomas J. Massingill
- 申请人： Tsing-Chow Wang , Serena M. Luo , Marlita F. Macaraeg , Francisca Tung , Thomas J. Massingill
- 申请人地址： CA San Jose
- 专利权人： VLSI Technology
- 当前专利权人： VLSI Technology
- 当前专利权人地址： CA San Jose
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L21/283
摘要：
The ball bump structure of the subject invention provides a hermetically sealed bond pad at the surface of a semiconductor chip. An adhesion pad is formed at the surface of the bond pad. The adhesion pad includes a barrier layer, preferably a titanium/tungsten alloy, and a bonding layer, for example, a sputtered gold layer. A gold ball bump is formed on the adhesion pad. Methods for forming the improved structure herein are also disclosed.