发明授权
- 专利标题: Halogen-activated chemical vapor deposition of diamond
- 专利标题(中): 金刚石的卤素化学气相沉积
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申请号: US417050申请日: 1995-04-04
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公开(公告)号: US5589231A公开(公告)日: 1996-12-31
- 发明人: Robert H. Hauge , Chenyu Pan
- 申请人: Robert H. Hauge , Chenyu Pan
- 申请人地址: TX Houston
- 专利权人: Rice University
- 当前专利权人: Rice University
- 当前专利权人地址: TX Houston
- 主分类号: C23C16/27
- IPC分类号: C23C16/27 ; B05D3/06 ; B05D3/14 ; C23C16/26
摘要:
The present invention is directed to a method of producing diamond films through the thermal dissociation of molecular chlorine into atomic chlorine in a heated graphite heat exchanger at temperatures of from about 1,100.degree. C. to about 1,800.degree. C. The atomic chlorine is subsequently rapidly mixed with molecular hydrogen and carbon-containing species downstream. Atomic hydrogen and the carbon precursors are produced through rapid hydrogen abstraction reactions of atomic chlorine with molecular hydrogen and hydrocarbons at the point where they mix. The mixed gases then flow across a heated substrate, where diamond is deposited as a film. Diamond deposits have been confirmed by Raman spectroscopy.
公开/授权文献
- US5141670A Ferroelectric liquid crystal composition 公开/授权日:1992-08-25
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