发明授权
- 专利标题: Ni.sub.45 Fe.sub.55 metal-in-gap thin film magnetic head
- 专利标题(中): Ni45Fe55金属间隙薄膜磁头
-
申请号: US351996申请日: 1994-12-08
-
公开(公告)号: US5606478A公开(公告)日: 1997-02-25
- 发明人: Mao-Min Chen , Neil L. Robertson
- 申请人: Mao-Min Chen , Neil L. Robertson
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; G11B5/147 ; G11B5/187 ; G11B5/31 ; G11B5/39 ; G11B5/193
摘要:
The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.
公开/授权文献
- US6160458A Temperature compensated crystal oscillator 公开/授权日:2000-12-12
信息查询
IPC分类: