发明授权
US5606521A Electrically erasable and programmable read only memory with non-uniform
dielectric thickness
失效
电可擦除可编程只读存储器，具有不均匀的介电厚度
- 专利标题： Electrically erasable and programmable read only memory with non-uniform dielectric thickness
- 专利标题（中）： 电可擦除可编程只读存储器，具有不均匀的介电厚度
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申请号： US496104申请日： 1995-06-28
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公开(公告)号： US5606521A公开(公告)日： 1997-02-25
- 发明人: Di-Son Kuo , Len-Yuan Tsou , Satyendranath Mukherjee , Mark Simpson
- 申请人： Di-Son Kuo , Len-Yuan Tsou , Satyendranath Mukherjee , Mark Simpson
- 申请人地址： NY New York
- 专利权人： Philips Electronics North America Corp.
- 当前专利权人： Philips Electronics North America Corp.
- 当前专利权人地址： NY New York
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; H01L21/336 ; H01L21/8247 ; H01L27/115 ; H01L29/423 ; H01L29/788 ; H01L29/792 ; G11C11/00 ; G11C11/34
摘要：
An electrically erasable and programmable read only memory (EEPROM) is provided with an insulated control gate and an insulating floating gate in a trench in a semiconductor body. A dielectric layer is disposed along the sidewalls of the trench to separate the floating gate and the semiconductor body. The thickness of the dielectric layer along at least one sidewall of the trench is greater than the thickness of the dielectric layer along the other sidewalls of the trench in order to increase the programming speed due to a higher electric field in the gate oxide along the remaining sidewalls.
公开/授权文献
- US5061840A Manufacture of ophthalmic lenses by excimer laser 公开/授权日：1991-10-29
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