发明授权
- 专利标题： System for oxygen precipitation control in silicon crystals
- 专利标题（中）： 硅晶体氧沉淀控制系统
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申请号： US517331申请日： 1995-08-21
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公开(公告)号： US5607507A公开(公告)日： 1997-03-04
- 发明人: Weldon J. Bell , H. Michael Grimes
- 申请人： Weldon J. Bell , H. Michael Grimes
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; C30B15/22 ; C30B35/00
摘要：
A method for controlling oxygen precipitation (106) in a silicon crystal (12) grown according to the Czochralski silicon crystal growing technique which includes the steps of forming a cylindrical portion (22) of the silicon crystal (12) from a reservoir of molten silicon (24) according to the Czochralski silicon crystal growing technique. The method includes the steps of terminating the Czochralski silicon crystal growing technique by forming a first tapered portion (101) in silicon crystal (12) at a predetermined rate. A second tapered portion (102) includes a cascaded middle portion (108) that connects to the first tapered portion (101) and that concentrates oxygen precipitation (106) within cascaded middle portion (108) and away from the cylindrical portion (22) of silicon crystal (12). At least a third tapered portion (104) is formed for separating silicon crystal (12) from molten silicon (24).
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