发明授权
- 专利标题： Method of making back gate contact for silicon on insulator technology
- 专利标题（中）： 硅绝缘体技术的背栅接触方法
-
申请号： US650697申请日： 1996-05-20
-
公开(公告)号： US5610083A公开(公告)日： 1997-03-11
- 发明人: Lap Chan , Ravis H. Sundaresan , Che-Chia Wei
- 申请人： Lap Chan , Ravis H. Sundaresan , Che-Chia Wei
- 申请人地址： SGX Singapore
- 专利权人： Chartered Semiconductor Manufacturing Pte LTD
- 当前专利权人： Chartered Semiconductor Manufacturing Pte LTD
- 当前专利权人地址： SGX Singapore
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/84
摘要：
A process for creating a back gate contact, in an SOI layer, that can easily be incorporated into a MOSFET fabrication recipe, has been developed. The back gate contact consists of a etched trench, lined with insulator, and filled with doped polysilicon. The polysilicon filled trench electrically connects the semiconductor substrate to overlying metal contacts.
公开/授权文献
信息查询
IPC分类:
