发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US275676申请日: 1994-07-15
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公开(公告)号: US5610414A公开(公告)日: 1997-03-11
- 发明人: Hiroshi Yoneda , Shigeto Yoshida , Kenichi Katoh , Yasukuni Yamane , Yutaka Ishii
- 申请人: Hiroshi Yoneda , Shigeto Yoshida , Kenichi Katoh , Yasukuni Yamane , Yutaka Ishii
- 申请人地址: JPX Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JPX Osaka
- 优先权: JPX5-186459 19930728; JPX5-242259 19930929; JPX5-268929 19931027
- 主分类号: G02F1/13
- IPC分类号: G02F1/13 ; G02F1/1362 ; G09G3/36 ; H01L23/528 ; H01L29/04 ; H01L27/10 ; H01L33/00
摘要:
In a semiconductor device wherein an active device circuit and electrically conductive lines, such as a power source line for supplying power to the semiconductor active device circuit or signal lines for inputting a signal to the semiconductor active device circuit, are formed together on a single substrate, an improved arrangement wherein a conventional power source or signal line is formed by using a plurally of individual lines of substantially uniform electrical resistance where the electrical resistance of each line is limited to a predetermined value. Moreover, a waveform deterioration response signal component is added to a signal transmitted through the signal lines so as to improve the transmitted signal by compensating for waveform deterioration experienced during circuit operation. In addition, an electrical capacity forming electrode is provided alongside substantial length of the power source line. A capacitor is thus effectively formed within the active device circuit by intervening a dielectric between the power source line and the capacity forming electrode so as to reduce high-frequency noise which occurs in the power source line. The disclosed arrangements substantially reduce the occurrence of an irregular operation in the active device circuit.
公开/授权文献
- US4430916A Apparatus for making slats for a slatted blind 公开/授权日:1984-02-14
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