Dielectric as load resistor in 4T SRAM

Invention Grant

US5616951A Dielectric as load resistor in 4T SRAM 失效

Title translation: 介质作为4T SRAM中的负载电阻

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Patent Title: Dielectric as load resistor in 4T SRAM
Patent Title (中): 介质作为4T SRAM中的负载电阻
Application No.: US519066

Application Date: 1995-08-24
Publication No.: US5616951A

Publication Date: 1997-04-01
Inventor: Mong-Song Liang
Applicant: Mong-Song Liang
Applicant Address: TWX Hsin-chu
Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
Current Assignee Address: TWX Hsin-chu
Main IPC: H01L21/8244
IPC: H01L21/8244 ; H01L27/11

Abstract:

A method of for manufacture of a semiconductor device on a semiconductor substrate including an SRAM cell with a resistor comprises formation of a first polysilicon layer on the semiconductor substrate, patterning and etching the first polysilicon layer, formation of an interpolysilicon layer over the first polysilicon layer, patterning and etching an opening through the interpolysilicon layer exposing a contact area on the surface of the first polysilicon layer, forming a dielectric load resistor in the opening upon the contact area on the first polysilicon layer, and formation of a second polysilicon layer on the device over the dielectric load resistor, over the interpolysilicon layer.

Abstract(Chinese):

一种用于在包括具有电阻器的SRAM单元的半导体衬底上制造半导体器件的方法，包括在半导体衬底上形成第一多晶硅层，图案化和蚀刻第一多晶硅层，在第一多晶硅层上形成多晶硅层，通过所述多晶硅层图案化和蚀刻暴露所述第一多晶硅层表面上的接触区域的开口，在所述第一多晶硅层上的所述接触区域上的所述开口中形成介电负载电阻器，以及在所述第一多晶硅层上形成第二多晶硅层在介质负载电阻上，在多晶硅层之上。

Public/Granted literature

US5065621A Visually enhanced weather vane apparatus Public/Granted day:1991-11-19

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8244	.........静态随机存取存储结构（SRAM）