发明授权
- 专利标题： Semiconductor laser
- 专利标题（中）： 半导体激光器
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申请号： US523189申请日： 1995-09-05
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公开(公告)号： US5619520A公开(公告)日： 1997-04-08
- 发明人: Yoichi Sasai , Nobuyuki Uemura , Satoshi Kamiyama , Minoru Kubo , Takashi Nishikawa
- 申请人： Yoichi Sasai , Nobuyuki Uemura , Satoshi Kamiyama , Minoru Kubo , Takashi Nishikawa
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX6-215956 19940909
- 主分类号： H01S5/223
- IPC分类号： H01S5/223 ; H01S5/347 ; H01S3/18
摘要：
A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x
公开/授权文献
- US5074988A Apparatus for monitoring an electrolyte 公开/授权日：1991-12-24