A semiconductor device manufactured by the process including a semiconductor substrate, which comprises the steps of forming buried bit lines below the surface of said semiconductor substrate forming individual source and drain regions; forming a gate oxide layer on the surface of the substrate; forming a first conductive structure on the gate oxide layer; forming an insulating structure in contact with the first conductive structure; removing material from the surface of the first conductive structure to expose at least a portion of the surface beneath the first conductive structure; and forming on the remaining structure on the semiconductor substrate metal line structures having edges vertically aligned with and above the source and drain regions in the buried bit lines; whereby a compound conductive structure is provided on the semiconductor substrate.