发明授权
US5638333A Bit line sensing circuit and method of a semiconductor memory device
失效
半导体存储器件的位线检测电路和方法
- 专利标题： Bit line sensing circuit and method of a semiconductor memory device
- 专利标题（中）： 半导体存储器件的位线检测电路和方法
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申请号： US487324申请日： 1995-06-07
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公开(公告)号： US5638333A公开(公告)日： 1997-06-10
- 发明人: Sang-Bo Lee
- 申请人： Sang-Bo Lee
- 申请人地址： KRX Suwon
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX Suwon
- 优先权： KRX13140/1994 19940610
- 主分类号： G11C11/419
- IPC分类号： G11C11/419 ; G11C7/06 ; G11C11/407 ; G11C11/409 ; G11C11/4091 ; G11C7/00
摘要：
A bit line sensing circuit of a semiconductor memory device having NMOS and PMOS sense amps connected to a bit line includes a variable delay path for variably controlling an interval of the operating time between the NMOS and PMOS sense amps in response to a power voltage sensing signal generated by sensing a power voltage level.