发明授权
- 专利标题: Gas injection slit nozzle for a plasma process reactor
- 专利标题(中): 用于等离子体处理反应器的气体注入狭缝喷嘴
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申请号: US307888申请日: 1994-09-16
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公开(公告)号: US5643394A公开(公告)日: 1997-07-01
- 发明人: Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , Brian Shieh , James S. Papanu
- 申请人: Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , Brian Shieh , James S. Papanu
- 申请人地址: CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: CA Santa Clara
- 主分类号: H05H1/46
- IPC分类号: H05H1/46 ; C23C16/44 ; C23C16/455 ; C23F4/00 ; H01J37/32 ; H01L21/302 ; H01L21/3065 ; H05H1/00
摘要:
The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member surrounded by at least one annular member with a gap therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
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