发明授权
US5643839A Method for producing semiconductor device 失效
半导体器件的制造方法

  • 专利标题: Method for producing semiconductor device
  • 专利标题(中): 半导体器件的制造方法
  • 申请号: US377703
    申请日: 1995-01-25
  • 公开(公告)号: US5643839A
    公开(公告)日: 1997-07-01
  • 发明人: Mikio Takagi
  • 申请人: Mikio Takagi
  • 申请人地址: JPX Kanagawa
  • 专利权人: F.T.L. Co., Ltd.
  • 当前专利权人: F.T.L. Co., Ltd.
  • 当前专利权人地址: JPX Kanagawa
  • 优先权: JPX5-83464 19930409
  • 主分类号: H01L21/324
  • IPC分类号: H01L21/324 C23C16/46 H01L21/00
Method for producing semiconductor device
摘要:
In a rapid thermal processing (RTP) of a large-diameter wafer, a wafer is heat treated by an upper high-temperature furnace and a lower low-temperature furnace, which are separated from and can be brought into close contact with one another by a relative vertical position adjusting means. The upper high-temperature furnace has an open bottom which is shut by an openable, heat insulating shutter. Height of the apparatus as a whole can be shortened.
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