Invention Grant
- Patent Title: Method for forming a tapered opening in silicon
- Patent Title (中): 在硅中形成锥形开口的方法
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Application No.: US690192Application Date: 1996-07-26
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Publication No.: US5651858APublication Date: 1997-07-29
- Inventor: Jung-Hui Lin
- Applicant: Jung-Hui Lin
- Applicant Address: IL Schaumburg
- Assignee: Motorola Inc.
- Current Assignee: Motorola Inc.
- Current Assignee Address: IL Schaumburg
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/3065 ; H01L21/306
Abstract:
A method for forming a tapered opening in a silicon substrate uses NF.sub.3 and HBr. The NF.sub.3 /HBr plasma etch allows both a good taper profile, 85.degree. to 60.degree., as well as a good etch rate, approximately 2500 to 3000 .ANG./minute. Although not limited to a particular trench size, the present method is well suited for forming openings smaller than 0.45 .mu.m.
Public/Granted literature
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