A semiconductor memory device includes a memory cell array with each cell being connected to respective pairs of complementary bit lines, and a write circuit for writing data to the memory cells by applying complementary write signals to the complementary bit lines. The write circuit includes complementary data lines, a buffer circuit for applying complementary data signals to the data lines in response to the input data, and sense amplifier connected to the data lines and the bit lines for amplifying the data lines differential signals and for producing the complementary write signals.