发明授权
- 专利标题： SOI substrate and method of producing the same
- 专利标题（中）： SOI衬底及其制造方法
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申请号： US403518申请日： 1995-03-13
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公开(公告)号： US5658809A公开(公告)日： 1997-08-19
- 发明人: Sadao Nakashima , Katsutoshi Izumi , Norihiko Ohwada , Tatsuhiko Katayama
- 申请人： Sadao Nakashima , Katsutoshi Izumi , Norihiko Ohwada , Tatsuhiko Katayama
- 申请人地址： JPX Kanagawa JPX Tokyo JPX Tokyo
- 专利权人： Komatsu Electronic Metals Co., Ltd.,Nippon Telegraph and Telephone Corporation,NTT Electronics Technology Corporation
- 当前专利权人： Komatsu Electronic Metals Co., Ltd.,Nippon Telegraph and Telephone Corporation,NTT Electronics Technology Corporation
- 当前专利权人地址： JPX Kanagawa JPX Tokyo JPX Tokyo
- 优先权： JPX6-076538 19940323
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/02 ; H01L21/265 ; H01L21/31 ; H01L21/762 ; H01L21/86 ; H01L27/00 ; H01L27/12
摘要：
A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.
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