发明授权
- 专利标题： Chemical mechanical polishing endpoint process control
- 专利标题（中）： 化学机械抛光终点过程控制
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申请号： US620721申请日： 1996-03-19
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公开(公告)号： US5659492A公开(公告)日： 1997-08-19
- 发明人: Leping Li , Steven George Barbee , Arnold Halperin
- 申请人： Leping Li , Steven George Barbee , Arnold Halperin
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： B24B37/013
- IPC分类号： B24B37/013 ; B24B49/03 ; H01L21/66 ; B24B49/16
摘要：
A method and apparatus are provided for determining the endpoint for chemical mechanical polishing a film on a wafer. First, a reference point polishing time indicating when a breakthrough of the film has occurred is determined, then an overpolishing time indicating an interval between the reference point polishing time and when the film has been completely polished is determined. To get the total polishing time to the endpoint, the reference point polishing time and the overpolishing time are added.