发明授权
US5663644A Magnetoresistive sensor having a bias field applied at approximately
56.degree.
失效
磁阻传感器具有施加在大约56°的偏置场
- 专利标题： Magnetoresistive sensor having a bias field applied at approximately 56.degree.
- 专利标题（中）： 磁阻传感器具有施加在大约56°的偏置场
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申请号： US632403申请日： 1996-08-05
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公开(公告)号： US5663644A公开(公告)日： 1997-09-02
- 发明人: Hiroshi Shimamura , Satoru Mitani
- 申请人： Hiroshi Shimamura , Satoru Mitani
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX6-198292 19940823
- 主分类号： G01D5/14
- IPC分类号： G01D5/14 ; G01D5/16 ; G01D5/245 ; G01P3/487 ; G01R33/09 ; G11B5/00 ; G11B5/39 ; G01R33/02 ; G01B5/30
摘要：
The present invention relates to a magnetic signal detection apparatus utilizing a ferromagnetic thin film magneto-resistive element which produces a maximum output of high linearity with an optimum direction of magnetization of the thin film magneto-resistive element by a small biasing magnetic field. A biasing magnetic field Hb is applied at an angle of approximately 56.degree. to a direction of a current I along a longitudinal direction of a thin film magneto-resistive element (2) on a substrate (1) to make a direction of magnetization M to approximately 45.degree. to attain a highly linear output between power supply terminals (4, 5).
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