发明授权
- 专利标题： SOI substrate manufacturing method
- 专利标题（中）： SOI衬底制造方法
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申请号： US563803申请日： 1995-11-28
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公开(公告)号： US5665631A公开(公告)日： 1997-09-09
- 发明人: Byoung-hun Lee , Chi-jung Kang , Kyung-wook Lee , Gi-ho Cha
- 申请人： Byoung-hun Lee , Chi-jung Kang , Kyung-wook Lee , Gi-ho Cha
- 申请人地址： KRX Suwon
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX Suwon
- 优先权： KRX95-11622 19950511
- 主分类号： H01L21/304
- IPC分类号： H01L21/304 ; H01L21/02 ; H01L21/18 ; H01L21/20 ; H01L27/12 ; H01L21/76
摘要：
A SOI substrate manufacturing method which corrects the warpage in the SOI substrate by varying the thickness of a semiconductor material layer additionally formed over the bonded combination of a semiconductor substrate and supporting substrate.