Invention Grant
- Patent Title: Attenuated phase shift mask and method of manufacture thereof
- Patent Title (中): 衰减相移掩模及其制造方法
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Application No.: US682458Application Date: 1996-07-17
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Publication No.: US5667919APublication Date: 1997-09-16
- Inventor: Chih-Chiang Tu , Jon-Yiew Gan , Tai-Bor Wu , Chin-Lung Lin
- Applicant: Chih-Chiang Tu , Jon-Yiew Gan , Tai-Bor Wu , Chin-Lung Lin
- Applicant Address: TWX Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TWX Hsin-Chu
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03F1/32 ; G03F9/00
Abstract:
An attenuated Phase Shift Mask (PSM) blank and an attenuated Phase Shift Mask (PSM), and a method by which the attenuated Phase Shift Mask (PSM) blank and the attenuated Phase Shift Mask (PSM) may be formed. To form the attenuated Phase Shift Mask (PSM) blank there is first provided a transparent substrate. Formed upon the transparent substrate is a tantalum-silicon oxide blanket semi-transparent shifter layer which has the formula,Ta.sub.x Si.sub.y O.sub.1-x-ywherein 0.1
Public/Granted literature
- US5064052A Reciprocating conveyor floor members and seals Public/Granted day:1991-11-12
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