发明授权
US5674777A Method for forming silicon-boron binary compound layer as boron
diffusion source in silicon electronic device
失效
在硅电子器件中形成硼 - 硼二元化合物层作为硼扩散源的方法
- 专利标题： Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device
- 专利标题（中）： 在硅电子器件中形成硼 - 硼二元化合物层作为硼扩散源的方法
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申请号： US572495申请日： 1995-12-14
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公开(公告)号： US5674777A公开(公告)日： 1997-10-07
- 发明人: Tung-Po Chen , Tan-Fu Lei , Chun-Yen Chang
- 申请人： Tung-Po Chen , Tan-Fu Lei , Chun-Yen Chang
- 申请人地址： TWX Taipei
- 专利权人： National Science Council
- 当前专利权人： National Science Council
- 当前专利权人地址： TWX Taipei
- 主分类号： H01L21/225
- IPC分类号： H01L21/225 ; H01L21/20
摘要：
The present invention is related to a method for fabricating a silicon electronic device having a boron diffusion source layer, includes steps of: a) providing a silicon substrate; b) depositing a silicon layer on said silicon substrate; and c) growing a silicon-boron binary compound layer on said silicon layer as said boron diffusion source. When the Si-B layer is formed by a UHV/CVD process according to the present invention, the boron concentration in the Si-B binary compound layer will be extraordinary high (up to 1.times.10.sup.21 to 5.times.10.sup.22 atoms/cm.sup.3).
公开/授权文献
- US4474702A [16,17-a]Cyclopentano pregnenes 公开/授权日：1984-10-02