发明授权
- 专利标题： Bilayer electrode on a n-type semiconductor
- 专利标题（中）： 双极电极在n型半导体上
-
申请号： US681565申请日： 1996-07-29
-
公开(公告)号： US5677572A公开(公告)日： 1997-10-14
- 发明人: Liang-Sun Hung , Ching Wan Tang
- 申请人： Liang-Sun Hung , Ching Wan Tang
- 申请人地址： NY Rochester
- 专利权人： Eastman Kodak Company
- 当前专利权人： Eastman Kodak Company
- 当前专利权人地址： NY Rochester
- 主分类号： H01L29/45
- IPC分类号： H01L29/45 ; H01L31/0224 ; H01L51/00 ; H01L51/30 ; H01L51/40 ; H01L51/52 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
An electrode in contact with a n-type semiconductor for use in an electronic or optoelectronic device is disclosed. The electrode includes a non-conducting layer contacting the semiconductor; a conductive layer contacting the non-conducting layer, and the materials and the thickness of the non-conducting layer being selected so that the bilayer forms a low-resistance contact to the semiconductor, the bilayer providing stability against atmospheric corrosion.
公开/授权文献
- US4652444A Methods and compositions for treating dental structures 公开/授权日：1987-03-24
信息查询
IPC分类:
