发明授权
- 专利标题: Thin-film structure with conductive molybdenum-chromium line
- 专利标题(中): 导电钼铬线薄膜结构
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申请号: US235008申请日: 1994-04-28
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公开(公告)号: US5693983A公开(公告)日: 1997-12-02
- 发明人: Jackson H. Ho , Robert R. Allen, deceased , Tzu-Chin Chuang
- 申请人: Jackson H. Ho , Robert R. Allen, deceased , Tzu-Chin Chuang
- 申请人地址: CT Stamford
- 专利权人: Xerox Corporation
- 当前专利权人: Xerox Corporation
- 当前专利权人地址: CT Stamford
- 主分类号: G02F1/136
- IPC分类号: G02F1/136 ; G02F1/1362 ; H01L21/3205 ; H01L23/52 ; H01L23/532 ; H01L29/786
摘要:
A conductive line in a thin-film structure such as an AMLCD array includes molybdenum and chromium so that it can be processed in a manner similar to chromium but has a greater conductivity than chromium due to the molybdenum. The conductive line can be produced by physical vapor deposition of a layer of a molybdenum-chromium (MoCr) alloy, which can then be masked and etched using photolithographic techniques in a manner similar to chromium. Proportions between 15 and 85 atomic percent of molybdenum can be processed more easily than pure molybdenum and are more conductive than pure chromium. Lines with between 40 and 60 atomic percent molybdenum can be used with a margin of error. To produce a tapered conductive line, sublayers of MoCr alloys with different etch rates can be produced and etched.
公开/授权文献
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