发明授权
US5708301A Electrode material and electrode for III-V group compound semiconductor
失效
用于III-V族化合物半导体的电极材料和电极
- 专利标题： Electrode material and electrode for III-V group compound semiconductor
- 专利标题（中）： 用于III-V族化合物半导体的电极材料和电极
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申请号： US392244申请日： 1995-02-22
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公开(公告)号： US5708301A公开(公告)日： 1998-01-13
- 发明人: Yasushi Iyechika , Noboru Fukuhara , Tomoyuki Takada , Yoshinobu Ono
- 申请人： Yasushi Iyechika , Noboru Fukuhara , Tomoyuki Takada , Yoshinobu Ono
- 申请人地址： JPX Osaka
- 专利权人： Sumitomo Chemical Company, Limited
- 当前专利权人： Sumitomo Chemical Company, Limited
- 当前专利权人地址： JPX Osaka
- 优先权： JPX6-030066 19940228
- 主分类号： H01L33/30
- IPC分类号： H01L33/30 ; H01L33/40 ; H01L23/48
摘要：
The invention provides an electrode material having the low contact resistance against a III-V group compound semiconductor, thereby realizing a light emitting device having a high luminance and driven at low voltages. The electrode material of the invention is applied to a III-V group compound semiconductor, which is expressed as a general formula of In.sub.x Ga.sub.y Al.sub.z N, where x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1, and doped with p-type impurities. The electrode material comprises an alloy of Au and at least one metal selected from the group consisting of Mg and Zn.
公开/授权文献
- USD324332S Bottle 公开/授权日：1992-03-03