发明授权
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US562790申请日： 1995-11-27
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公开(公告)号： US5726089A公开(公告)日： 1998-03-10
- 发明人: Kensuke Okonogi
- 申请人： Kensuke Okonogi
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-314480 19921125
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/18 ; H01L21/20 ; H01L21/76 ; H01L21/302
摘要：
A method for fabricating a semiconductor device having a bonded wafer structure capable of reducing crystal defect in a power element forming region thereof is disclosed A recess is formed in a control circuit element forming region of a first n- silicon substrate, then filled with a silicon oxide film and subjected to grinding and polishing to provide a mirror-surface. An n- epitaxial layer is formed on the surface of a second n+ silicon substrate, then the surface of the epitaxial layer is coupled to the surfaces of the silicon oxide film and second circuit region of the first substrate and heat-treated to be bonded thereto.
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