发明授权
US5734280A Semiconductor integrated circuit device having power on reset circuit
失效
具有上电复位电路的半导体集成电路器件
- 专利标题: Semiconductor integrated circuit device having power on reset circuit
- 专利标题(中): 具有上电复位电路的半导体集成电路器件
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申请号: US683637申请日: 1996-07-15
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公开(公告)号: US5734280A公开(公告)日: 1998-03-31
- 发明人: Hirotoshi Sato
- 申请人: Hirotoshi Sato
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX8-000710 19960108
- 主分类号: H03K17/22
- IPC分类号: H03K17/22 ; H03K23/40
摘要:
A semiconductor integrated circuit device has an internal circuit node reset signal generation circuit for inverting an output signal with a predetermined time lag immediately after application of power. The internal circuit node reset generation circuit comprises an initial stage power on reset signal generation circuit, an initial stage signal transmission circuit for inputting a signal outputted by the initial stage power on reset signal generation circuit, a final stage power on reset signal generation circuit for inputting a signal outputted by the initial stage signal transmission circuit, and a final stage signal transmission circuit for inputting a signal outputted by the power on reset signal and outputting the output signal. When an operating source voltage lower limit value of the initial stage power on reset signal generation circuit is lower than that of the final stage signal transmission circuit and a source voltage has not reached a predetermined value, it is possible for the final stage power on reset signal generation circuit to generate an output signal without being influenced by the initial stage power on reset signal generation circuit, and to output an internal circuit inactivation signal for a certain time after application of power, and an inversion signal after passing the certain time. As a result, a certain internal circuit initialization time may be exactly established.
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