发明授权
- 专利标题: Magnetic memory having shape anisotropic magnetic elements
- 专利标题(中): 具有形状各向异性磁性元件的磁记忆体
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申请号: US512555申请日: 1995-08-08
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公开(公告)号: US5741435A公开(公告)日: 1998-04-21
- 发明人: Charles P. Beetz, Jr. , John Steinbeck , Robert W. Boerstler , David R. Winn
- 申请人: Charles P. Beetz, Jr. , John Steinbeck , Robert W. Boerstler , David R. Winn
- 申请人地址: CT Oxford
- 专利权人: Nano Systems, Inc.
- 当前专利权人: Nano Systems, Inc.
- 当前专利权人地址: CT Oxford
- 主分类号: G11C11/14
- IPC分类号: G11C11/14 ; H01F1/00 ; H01F1/03 ; B41B27/10 ; G11C11/414 ; H01L21/8229 ; H01L21/8239
摘要:
A static magnetic memory includes a layer having a plurality of vertically oriented and shape-anisotropic elongated ferromagnetic particles. A plurality of writing conductors are adjacent the layer, and the conductors selectively apply magnetic fields to selected regions of the layer by directing electrical current to magnetize the particles in an up or down direction. Static reading means detect the direction of magnetization. The particles may include a soft magnet portion and a hard magnet portion. In another preferred embodiment, a material and a method of making same includes providing a matrix full of elongated holes, depositing a first magnetic material having a first coercivity into the holes, and then depositing a second magnetic material having a second coercivity into the holes to form a composite elongated particle in each hole.
公开/授权文献
- US3938466A Location indicating device 公开/授权日:1976-02-17