A preslewing circuit to rapidly drop a voltage on the gate of a power device in a power stage has a combination of a bipolar transistor and CMOS transistors. The gate voltage is brought down by the preslewing circuit to a level at which an output voltage can begin to change. The combination has high conduction and can be integrated readily, with good internal isolation, in a small chip area, thus having qualities desirable for high performance, integrated, driver circuits.