发明授权
- 专利标题: Semiconductor laser and production method thereof
- 专利标题(中): 半导体激光及其制造方法
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申请号: US684383申请日: 1996-07-19
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公开(公告)号: US5742629A公开(公告)日: 1998-04-21
- 发明人: Takashi Nishikawa , Nobuyuki Uemura , Satoshi Kamiyama
- 申请人: Takashi Nishikawa , Nobuyuki Uemura , Satoshi Kamiyama
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX7-185212 19950721
- 主分类号: H01S5/20
- IPC分类号: H01S5/20 ; H01S5/223 ; H01S5/327 ; H01S5/347 ; H01S3/19
摘要:
A semiconductor laser includes: an active layer formed of a II-VI group compound semiconductor material; a first cladding layer and a second cladding layer disposed so as to put the active layer therebetween; a light confinement layer provided on the second cladding layer, having an opening for current flow and formed of ZnMgSSe; and a third cladding layer provided at the opening of the light confinement layer. The light confinement layer has high resistivity or has a conductivity type opposite to that of the third cladding layer; the second and third cladding layers are formed of ZnMgSSe; and a Mg content and a S content of the light confinement layer are larger than a Mg content and a S content of the second and third cladding layers.
公开/授权文献
- US5208070A Method of aluminum plating an article 公开/授权日:1993-05-04