发明授权
US5744198A Method of depositing metal sulfide films from metal thiocarboxylate
complexes with multidentate ligands
失效
从金属硫代羧酸盐络合物与多齿配体沉积金属硫化物膜的方法
- 专利标题: Method of depositing metal sulfide films from metal thiocarboxylate complexes with multidentate ligands
- 专利标题(中): 从金属硫代羧酸盐络合物与多齿配体沉积金属硫化物膜的方法
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申请号: US607363申请日: 1996-02-27
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公开(公告)号: US5744198A公开(公告)日: 1998-04-28
- 发明人: Mark Hampden-Smith , Klaus Kunze , May Nyman
- 申请人: Mark Hampden-Smith , Klaus Kunze , May Nyman
- 申请人地址: NM Albuquerque
- 专利权人: The University of New Mexico
- 当前专利权人: The University of New Mexico
- 当前专利权人地址: NM Albuquerque
- 主分类号: C07C327/06
- IPC分类号: C07C327/06 ; C23C18/12 ; B05C3/02 ; B05C5/06
摘要:
In a method of depositing a metal sulfide film on a substrate, at least one metal compound precursor comprising at least one thiocarboxylate ligand SECR and at least one solubility-improving ligand L is dissolved in a solvent to produce a solution, wherein a) E is selected from the group consisting of O and S and R is selected from the group consisting of alkyl, aryl, substituted alkyl, substituted aryl, halogenated alkyl, and halogenated aryl; and wherein b) L is selected from the group of monodentate ligands, multidentate ligands, and R.sup.1 O ligands. The solution is coated onto a substrate and the substrate is heated to a reaction temperature sufficient to decompose the metal compound precursor to form a metal sulfide film of at least one metal on the substrate.
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