发明授权
- 专利标题： Method for producing a transistor using anodic oxidation
- 专利标题（中）： 使用阳极氧化制造晶体管的方法
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申请号： US455151申请日： 1995-05-31
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公开(公告)号： US5747355A公开(公告)日： 1998-05-05
- 发明人: Toshimitsu Konuma , Akira Sugawara , Takahiro Tsuji
- 申请人： Toshimitsu Konuma , Akira Sugawara , Takahiro Tsuji
- 申请人地址： JPX Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa-ken
- 优先权： JPX5-096667 19930330
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/786 ; H01L21/786
摘要：
A method for producing a thin-film transistor (TFT) in which the gate electrode is offset from the source and drain without detriment to the characteristics of the device or to manufacturing yield, and a structure for such a TFT, are disclosed. A gate electrode is formed using a material capable of anodic oxidation, and a mask is formed on the gate electrode. Using a comparatively low voltage, a comparatively thick, porous anodic oxide film is formed on the sides of the gate electrode. The mask is then removed and using a comparatively high voltage a dense anodic oxide film is formed at least on the top of the gate electrode. Using the gate electrode having this anodic oxide on its top and sides as a mask, an impurity is introduced into the semiconductor film and an offset structure is obtained.
公开/授权文献
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