- 专利标题： Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film
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申请号： US524904申请日： 1995-09-07
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公开(公告)号： US5753934A公开(公告)日： 1998-05-19
- 发明人: Yoshihiko Yano , Takao Noguchi
- 申请人： Yoshihiko Yano , Takao Noguchi
- 申请人地址： JPX Tokyo
- 专利权人： TOK Corporation
- 当前专利权人： TOK Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-219850 19950804
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/314 ; H01L29/06 ; H01L23/58
摘要：
A multilayer thin film of the invention has an oxide thin film formed on a semiconductor single crystal substrate, and the oxide thin film includes at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium). Included is an oriented thin film formed on the oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface. Consequently, there are provided a perovskite oxide thin film of (001) orientation, a substrate for an electronic device comprising the thin film, and a method for preparing the thin film.
公开/授权文献
- US5033110A Frequency converter for a radio communications system 公开/授权日：1991-07-16
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