发明授权
- 专利标题: Diamond synthesis from silicon carbide
- 专利标题(中): 钻石从碳化硅合成
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申请号: US796932申请日: 1991-11-25
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公开(公告)号: US5756061A公开(公告)日: 1998-05-26
- 发明人: John L. White
- 申请人: John L. White
- 专利权人: White; John L.
- 当前专利权人: White; John L.
- 主分类号: B01J3/06
- IPC分类号: B01J3/06 ; C01B31/06
摘要:
Diamonds are synthesized from SiC at temperatures and/or pressures lower than those required to convert amorphous carbon or graphite to diamond, by heating the SiC in the absence of another non-diamondaceous source of elemental carbon and in the presence of a reactant which selectively reacts with the Si at the temperature to which the SiC is heated, and in a matrix which is frangible when cooled, while the Sic is within the diamond stable region of the diamond-graphite phase diagram, thereby permitting the diamond to be separated therefrom by physical means.
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