发明授权
- 专利标题： Semiconductor growth method with thickness control
- 专利标题（中）： 具有厚度控制的半导体生长方法
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申请号： US664940申请日： 1996-06-14
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公开(公告)号： US5756375A公开(公告)日： 1998-05-26
- 发明人: Francis G. Celii , Walter M. Duncan , Tae S. Kim
- 申请人： Francis G. Celii , Walter M. Duncan , Tae S. Kim
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/66 ; H01L21/203
摘要：
Molecular beam epitaxy (202) with growing layer thickness and doping control (206) by feedback of sensor signals such as spectrosceopic ellipsometer signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes and hetrojunction bipolar transistors with doped and undoped GaAs layers, AlGaAs and InGaAs.
公开/授权文献
- US5166775A Air manifold for cooling electronic devices 公开/授权日：1992-11-24
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