发明授权
US5770507A Method for forming a gate-side air-gap structure in a salicide process
失效
在自对准硅化物工艺中形成栅极侧气隙结构的方法
- 专利标题: Method for forming a gate-side air-gap structure in a salicide process
- 专利标题(中): 在自对准硅化物工艺中形成栅极侧气隙结构的方法
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申请号: US785782申请日: 1997-01-21
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公开(公告)号: US5770507A公开(公告)日: 1998-06-23
- 发明人: Chun-Cho Chen , Gene Jiing-Chiang Chang
- 申请人: Chun-Cho Chen , Gene Jiing-Chiang Chang
- 申请人地址: TWX Hsinchu
- 专利权人: Winbond Electronics Corp.
- 当前专利权人: Winbond Electronics Corp.
- 当前专利权人地址: TWX Hsinchu
- 优先权: TWX85113683 19961109
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L29/49 ; H01L21/283
摘要:
A method for forming a gate-side air-gap structure in a salicide process for preventing bridging, which starts on a semiconductor wafer with active region defined completely by field oxide, includes the steps: depositing sequentially a thin oxide layer, a polysilicon layer, and a first layer over the wafer; patterning the first layer, the polysilicon layer, and the thin oxide layer to form a stack gate which consists of first layer and a gate, wherein the gate consists of the polysilicon layer and the thin oxide layer; forming lightly-doped drains beside the stack gate in the active region; forming a second layer on the sidewall of the stack gate; forming a spacer on the sidewall of the second layer; forming source and drain regions; removing the first layer and the second layer to reveal the gate, wherein air gaps exist between the gate and the spacer; depositing a titanium layer over the wafer; heating the titanium layer to form TiSi.sub.2 layers on the gate, the drain region, and the source region; removing the titanium layer remaining intact over the air gaps, the spacer, and the field oxide; and heating the TiSi.sub.2 layer over the wafer.
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