发明授权
US5783481A Semiconductor interlevel dielectric having a polymide for producing air
gaps
失效
具有用于产生气隙的聚酰亚胺的半导体层间电介质
- 专利标题: Semiconductor interlevel dielectric having a polymide for producing air gaps
- 专利标题(中): 具有用于产生气隙的聚酰亚胺的半导体层间电介质
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申请号: US659167申请日: 1996-06-05
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公开(公告)号: US5783481A公开(公告)日: 1998-07-21
- 发明人: William S. Brennan , Robert Dawson , H. Jim Fulford, Jr. , Fred N. Hause , Basab Bandyopadhyay , Mark W. Michael
- 申请人: William S. Brennan , Robert Dawson , H. Jim Fulford, Jr. , Fred N. Hause , Basab Bandyopadhyay , Mark W. Michael
- 申请人地址: CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: CA Sunnyvale
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/44 ; H01L21/48
摘要:
A dielectric material is provided having air gaps which form during dielectric deposition between horizontal or vertical spaced conductors. The dielectric is deposited upon a polyimide, wherein the polyimide is placed over and between an underlying level of conductors. As the overlying dielectric is deposited on the polyimide, the polyimide material outgasses to form air separation between the polyimide and dielectric. Air separation is particularly prevalent in regions between closely spaced conductors and in high elevational areas directly above each conductor. The dielectric deposition process preferably includes two deposition cycles. A first deposition temperature is used to force significant outgassing, and a second deposition cycle is needed to close any and all keyhole openings which might exist between closely spaced conductors. A combination of polyimide, air gaps (air-filled cavities) and deposited dielectric forms an inter-level dielectric structure having a low dielectric permittivity or dielectric constant in critical conductor spaces.
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