An improved process and integrated-circuit having CMOS (NMOS and/or PMOS) devices formed on a substrate and a NMOS electro static discharge circuit formed in a P well on the substrate. The improvement includes an electro static discharge NMOS circuit having an undoped polysilicon gate electrode, and the NMOS FET devices having n-type doped gate electrodes. The undoped gate polysilicon electrode of the electro static discharge transistor increases the gate oxide breakdown voltage thus making the ESD transistor able to withstand a greater voltage discharge and therefore providing better protection to the product devices.