An electron-beam cell projection lithography apparatus includes an electron-beam source, a first aperture through which an electron-beam transmitted from the electron-beam source passes is shaped, and a second aperture formed with an aperture in a desired transfer pattern. The electron beam passes through the second aperture and irradiates an object. The second aperture is placed on a stage, which is movable in X and Y axes directions. A registration mark is placed or positioned on at least one of the second aperture and the stage. The apparatus also includes a device such as a microscope, a charge coupled device (CCD) for observing the registration mark to position the second aperture. The observing device has variable magnifications. The second aperture can be positioned by observing the registration mark with the observing device having variable magnifications. Thus, the second aperture is first roughly positioned by virtue of the registration mark by observing the second aperture and a wide area of the stage with the observing device adjusted to have low magnifications, and then accurately positioned with the observing device adjusted to have high magnifications. Thus, it is possible to align the registration mark with a reference point in a short period of time, thereby accomplishing rapid positional adjustment of the stage on which the second aperture is placed. In addition, since the second aperture can be wholly observed, it is possible to find defects and damages of a transfer pattern.