发明授权
- 专利标题： Crack stops
-
申请号： US823668申请日： 1997-03-24
-
公开(公告)号： US5789302A公开(公告)日： 1998-08-04
- 发明人: Alexander R. Mitwalsky , Tze-Chiang Chen
- 申请人： Alexander R. Mitwalsky , Tze-Chiang Chen
- 申请人地址： DEX Munich NY Armonk
- 专利权人： Siemens Aktiengesellschaft,International Business Machines Corporation
- 当前专利权人： Siemens Aktiengesellschaft,International Business Machines Corporation
- 当前专利权人地址： DEX Munich NY Armonk
- 主分类号： H01L21/301
- IPC分类号： H01L21/301 ; H01L21/78 ; H01L21/46
摘要：
Crack stops for substantially preventing cracks and chips produced along the dicing channel from spreading into the active areas of the ICs are described. The crack stops are formed by creating discontinuities in the thickness of the dielectric layer in the dicing channel near the chip edges. The discontinuities can result in increasing and/or decreasing the thickness of the dielectric layer.
公开/授权文献
- US5253414A Tool bank for surface mount machine 公开/授权日：1993-10-19
信息查询
IPC分类:
