发明授权
- 专利标题: Film bulk acoustic wave device
- 专利标题(中): 薄膜体声波装置
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申请号: US559706申请日: 1995-11-15
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公开(公告)号: US5789845A公开(公告)日: 1998-08-04
- 发明人: Shusou Wadaka , Koichiro Misu , Tsutomu Nagatsuka , Tomonori Kimura , Shunpei Kameyama , Chisako Maeda , Akira Yamada , Toshihisa Honda
- 申请人: Shusou Wadaka , Koichiro Misu , Tsutomu Nagatsuka , Tomonori Kimura , Shunpei Kameyama , Chisako Maeda , Akira Yamada , Toshihisa Honda
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX6-289804 19941124
- 主分类号: H03B5/32
- IPC分类号: H03B5/32 ; H03F3/195 ; H03H9/00 ; H03H9/02 ; H03H9/05 ; H03H9/17 ; H03H9/19 ; H01L29/66
摘要:
Embodiments of the present invention provide a small and well-characterized bulk acoustic wave device by fabricating a filter having a wide band width or a resonator having a wide oscillation frequency range together with a semiconductor circuit. In embodiments of the present invention, a bulk acoustic wave device comprises a semiconductor substrate having a dielectric substance layer thereon, the dielectric substance layer has a ground conductor layer thereon, the ground conductor layer has a piezoelectric ceramic thin film thereon and the piezoelectric ceramic thin film has a conductive electrode pattern thereon. The thickness of the piezoelectric ceramic thin film is more than ten times the thickness of the ground conductor layer, and the wave number of acoustic waves that propagate in a direction parallel to a surface of the piezoelectric ceramic thin film multiplied by the thickness of the piezoelectric ceramic thin film is less than 2.