Invention Grant
US5790578A Laser diode with an improved multiple quantum well structure adopted for
reduction in wavelength chirping
失效
激光二极管具有改进的多重量子阱结构,用于减少波长啁啾
- Patent Title: Laser diode with an improved multiple quantum well structure adopted for reduction in wavelength chirping
- Patent Title (中): 激光二极管具有改进的多重量子阱结构,用于减少波长啁啾
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Application No.: US625345Application Date: 1996-04-01
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Publication No.: US5790578APublication Date: 1998-08-04
- Inventor: Shinji Takano
- Applicant: Shinji Takano
- Applicant Address: JPX Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JPX Tokyo
- Priority: JPX7-098034 19950330
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/062 ; H01S5/10 ; H01S5/12 ; H01S5/20 ; H01S5/22 ; H01S5/227 ; H01S5/32 ; H01S5/34 ; H01S5/343 ; H01S3/19
Abstract:
The present invention provides another active layer structure provided in a light emission device for emitting a light with a predetermined wavelength. The active layer structure comprises a multiple quantum well structure and at least a second well layer. The multiple quantum well structure comprises alternating laminations of first well layers showing electroluminescence and potential barrier layers. The first well layers have a first set of energy band gaps which are uniform and correspond to the predetermined wavelength. An energy band gap is defined as a difference between a ground level of electrons in conduction band and a ground level of holes in valence band. The second well layer is provided within any of the potential barrier layers so that the second well layer is separated by the potential barrier layers from the first well layers. The second well layer has a second energy band gap in a range which is above the first set of energy band gaps and below a set of forbidden band widths of the potential barrier layers. The range of the second energy band gaps is defined so that the second well layer exits carrier accumulations and no electroluminescence to thereby ensure that carriers accumulated in the second well layer are injected into the first well layers when the first well layers are deficient in carriers for the electro-luminescence.
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