发明授权
- 专利标题: Semiconductor thin film sensor device with (110) plane
- 专利标题(中): 具有(110)面的半导体薄膜传感器装置
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申请号: US613447申请日: 1996-03-01
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公开(公告)号: US5793073A公开(公告)日: 1998-08-11
- 发明人: Morimasa Kaminishi , Takayuki Yamaguchi , Yukito Satoh
- 申请人: Morimasa Kaminishi , Takayuki Yamaguchi , Yukito Satoh
- 申请人地址: JPX Tokyo
- 专利权人: Ricoh Co., Ltd.
- 当前专利权人: Ricoh Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX7-041485 19950301
- 主分类号: G01P5/12
- IPC分类号: G01P5/12 ; G01F1/68 ; G01F1/684 ; G01F1/692 ; G01N27/12 ; G01N27/18 ; H01L21/306 ; H01L29/82
摘要:
A semiconductor thin film sensor device including a semiconductor body formed of silicon having a (110) plane; a depression formed by an anisotropic etch applied to a first surface of the semiconductor body, wherein the first surface is substantially parallel to the (110) plane; and a thin film insulation member having a predetermined configuration suspended over the depression, and having substantially opposing ends connected to the first surface of the semiconductor body so that the thin film insulation member is bridged across the depression. Preferably, the depth of the depression is over 200 .mu.m. In one embodiment, the predetermined configuration of the thin film insulation member is oriented substantially parallel to a direction of the semiconductor body.