发明授权
- 专利标题： Power semiconductor device having over-current protection
- 专利标题（中）： 功率半导体器件具有过流保护功能
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申请号： US668233申请日： 1996-06-21
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公开(公告)号： US5804859A公开(公告)日： 1998-09-08
- 发明人: Hitoshi Takahashi , Yosuke Takagi
- 申请人： Hitoshi Takahashi , Yosuke Takagi
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX7-157260 19950623
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H03K17/082 ; H03K17/12 ; H01L23/62
摘要：
A semiconductor device having an input terminal and an output terminal includes at least one high power device for supplying output current as an output section, and over-current limiting circuits, each including a over-current detection circuit, for limiting the amount of each current flowing through a plurality of bonding wires by which the output terminal is connected to an external terminal, to a current value of a desired amount or less. Thereby, an over-current condition where the current value is over an allowable current value, is avoided and blowing the bonding wire of the device can be prevented.
公开/授权文献
- US5199213A Cemetery plant pot 公开/授权日：1993-04-06
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