发明授权
US5809211A Ramping susceptor-wafer temperature using a single temperature input
失效
使用单个温度输入来加速基座晶圆温度
- 专利标题: Ramping susceptor-wafer temperature using a single temperature input
- 专利标题(中): 使用单个温度输入来加速基座晶圆温度
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申请号: US570395申请日: 1995-12-11
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公开(公告)号: US5809211A公开(公告)日: 1998-09-15
- 发明人: Roger N. Anderson , Harold J. Mellen, III
- 申请人: Roger N. Anderson , Harold J. Mellen, III
- 申请人地址: CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: CA Santa Clara
- 主分类号: C30B25/10
- IPC分类号: C30B25/10 ; C30B25/16 ; G01J5/00 ; G01J5/10 ; H01L21/00 ; H01L23/34 ; G01J5/28 ; F27B1/26 ; F27D19/00 ; H01L21/66
摘要:
A method and apparatus for uniformly ramping the temperatures of a wafer and a susceptor using a first heat source primarily directed at the wafer and a second heat source primarily directed at the susceptor while keeping the wafer at approximately the same temperature as the susceptor but measuring only the temperature of the susceptor. The method comprises the steps of: determining and storing a plurality of steady-state temperatures of the susceptor as a function of the total power provided to the first heat source and the second heat source; ramping the susceptor from an initial temperature to a final temperature; and heating the wafer from the initial temperature to the final temperature, wherein the power to the first heat source is determined from the susceptor's temperature and the plurality of steady-state temperatures of the wafer and susceptor as a function of total power.
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