发明授权
US5814584A Compound in the series A.sub.2 MeSbO.sub.6 for use as substrates
barrier-dielectric layers and passivating layers in high critical
temperature superconducting devices
失效
用于在高临界温度超导器件中用作衬底阻挡介电层和钝化层的A2MeSbO6系列中的化合物
- 专利标题： Compound in the series A.sub.2 MeSbO.sub.6 for use as substrates barrier-dielectric layers and passivating layers in high critical temperature superconducting devices
- 专利标题（中）： 用于在高临界温度超导器件中用作衬底阻挡介电层和钝化层的A2MeSbO6系列中的化合物
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申请号： US502739申请日： 1995-06-30
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公开(公告)号： US5814584A公开(公告)日： 1998-09-29
- 发明人: Arthur Tauber , William D. Wilber , Steven C. Tidrow , Robert D. Finnegan , Donald W. Eckart
- 申请人： Arthur Tauber , William D. Wilber , Steven C. Tidrow , Robert D. Finnegan , Donald W. Eckart
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the Secretary of the Army
- 当前专利权人： The United States of America as represented by the Secretary of the Army
- 当前专利权人地址： DC Washington
- 主分类号： C04B35/01
- IPC分类号： C04B35/01 ; H01L39/24 ; H01B39/12
摘要：
Compounds of the general formula A.sub.2 MeSbO.sub.6 wherein A is either barium (Ba) or strontium (Sr) and Me is a non-magnetic ion selected from the group consisting of scandium (Sc), indium (In) and gallium (Ga) have been prepared and included in high critical temperature thin film superconductor structures.
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