发明授权
- 专利标题: Highly scalable FLASH EEPROM cell
- 专利标题(中): 高度可扩展的闪存EEPROM单元
-
申请号: US711479申请日: 1996-09-09
-
公开(公告)号: US5814854A公开(公告)日: 1998-09-29
- 发明人: David K. Y. Liu , Wenchi Ting
- 申请人: David K. Y. Liu , Wenchi Ting
- 专利权人: Liu; David K. Y.,Ting; Wenchi
- 当前专利权人: Liu; David K. Y.,Ting; Wenchi
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; H01L27/115 ; H01L29/788 ; H01L29/792
摘要:
The present invention is directed toward a novel type of FLASH EEPROM cell that is highly scalable in size, easy to fabricate, reliable and capable of in-system programmability. The semiconductor memory cell comprises a lightly doped n- region including a channel region, a first insulating layer overlying portions of said n- region, and a floating gate overlying said first insulating layer. The cell further includes a second insulating layer overlying said floating gate and a control gate overlying second insulating layer.
公开/授权文献
- US5257968A Inflatable dam for a decanter centrifuge 公开/授权日:1993-11-02