Invention Grant
US5822240A Ferroelectric random access memory circuits and structures for
preventing ferroelectric capacitors from memory failure
失效
铁电随机存取存储器电路和用于防止铁电电容器存储器故障的结构
- Patent Title: Ferroelectric random access memory circuits and structures for preventing ferroelectric capacitors from memory failure
- Patent Title (中): 铁电随机存取存储器电路和用于防止铁电电容器存储器故障的结构
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Application No.: US549898Application Date: 1995-10-30
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Publication No.: US5822240APublication Date: 1998-10-13
- Inventor: In-kyung Yoo
- Applicant: In-kyung Yoo
- Applicant Address: KRX Kyungki-Do
- Assignee: Samsung Electronics Co. Ltd.
- Current Assignee: Samsung Electronics Co. Ltd.
- Current Assignee Address: KRX Kyungki-Do
- Priority: KRX199531247 19950921
- Main IPC: H01G4/00
- IPC: H01G4/00 ; G11C11/22
Abstract:
A novel ferroelectric random access memory structure which comprises a capacitor consisting of upper and lower plane electrodes and a ferroelectric inserted therebetween, and a transistor comprising a means of inducing the capacitor to polarization and maintaining it, connected with at least one of the electrodes, wherein the electric potential of the upper electrode is equalized with that of the lower electrode, thereby preventing the polarization reversal caused by pyroelectric charges.
Public/Granted literature
- USD279236S Pants hanger Public/Granted day:1985-06-18
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