发明授权
- 专利标题： Method of making and accessing split gate memory device
- 专利标题（中）： 制造和访问分闸门存储器件的方法
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申请号： US876326申请日： 1997-06-16
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公开(公告)号： US5824584A公开(公告)日： 1998-10-20
- 发明人: Wei-Ming Chen , Lee Z. Wang , Kuo-Tung Chang , Craig Swift
- 申请人： Wei-Ming Chen , Lee Z. Wang , Kuo-Tung Chang , Craig Swift
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L21/8239
- IPC分类号： H01L21/8239 ; H01L27/105 ; H01L21/336
摘要：
A non-volatile memory having a control gate (14) and a sidewall select gate (28) is illustrated. The sidewall select gate (28) is formed in conjunction with a semiconductor doped oxide (20) to form a non-volatile memory cell (7). The semiconductor element used to dope the oxide layer (20) will generally include silicon or germanium. The non-volatile memory cell (7) is programmed by storing electrons in the doped oxide (20), and is erased using band-to-band tunneling.
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